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The Process Sense detector gets mounted onto a bypass on the rough line, ensuring no effect on deposition hardware. The signal level reported by the Process Sense detector, which is proportional to SiF4 concentration, can be used to determine the completion of the chamber clean process. Sensitivity to SiF4 down to 1 ppm Simple analog output for reported concentration signal See All Features Products Show Filters: View all products Compare Description Compatibility sortOrder rankScore ranking Drawings, CAD & Specs Measurement Technique Measurement Range Detection Limit Response Time Availability Featured Item Price Brand PROCESS-SENSE-NDIRLoading... Quote Loading... Clean NDIR Endpoint Sensor, Process Sense™, Non-dispersive Infrared Chamber Contact Us PROCESS-SENSE-NDIR Clean NDIR Endpoint Sensor, Process Sense™, Non-dispersive Infrared Chamber UNIVERSAL 0.0 1.0 0.0 0.0 Nondispersive Infrared Sensor SiF4 1 - 200 ppm (at 760 Torr) 1 ppm SiF4 (at 760 Torr) 1 second report rate Contact Us Loading... Quote Loading... Show All process-sense-clean-endpoint-sensor - Drawings & CAD Additional CAD file downloads are not available for this product. CAD File Downloads: Loading... Download Close Close Close process-sense-clean-endpoint-sensor - Drawings Additional drawings are not available for this product. Close Close Specifications Type Process Sense™ NDIR Measurement Technique NDIR Measurement Range SiF4: 1-200 ppm (at 760 Torr) Detection Limit 1 ppm SiF4 (at 760 Torr) Response Time 1 second report rate Calibration Accuracy ±10% Electrical Connector DB25 (DB15 adapter available) Power Requirements 24 VDC (2 amp) Dimensions 38 x 12 x 13 cm (15 x 4.5 x 5 inches) Weight 2.5 kg (5.5 lbs) Analog Output Analog 1 (AO1): 0-10 V (1x SiF4 concentration)
Analog 2 (AO2): 0-10 V (20x SiF4 concentration) Digital Output Fault signals Sample Pressure 1-760 Torr Sample Temperature 25-60°C Fittings NW25, NW40, NW50 (others available upon request) Features Applications Silicon Oxides (USG, FSG, PSG, BSG, BPSG) Silicon Nitrides Polysilicon Silane or TEOS processes Key Benefits Reduced chamber clean times with accurate measurement of SiF4 concentration Accurate determination of chamber clean endpoint reduces chamber wall over etching Increase CVD wafer throughput by shortening chamber clean cycle Resources Literature Process Sense™ NDIR End Point Detector for Chamber Clean (222.9 kB, PDF) Application Notes Chamber Clean Endpoint Control (116.3 kB, PDF) Optical Gas Analyzers in Modern Semiconductor Manufacturing (347.7 kB, PDF) Infrared Technology for Chamber Clean Endpoint Detection (1.3 MB, PDF) Drawings & CADs ProcessSense™ NDIR Dimensional Drawing (102.5 kB, PDF) process-sense-clean-endpoint-sensor Related Products T-Series Advanced IR Gas Analyzer for Process Monitoring Related Products T-Series Advanced IR Gas Analyzer for Process Monitoring Need help? Contact an Applications Specialist by sending us an email
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